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Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature

Date

Authors

Kucheyev, Sergei

Williams, James

Zou, Jin

Li, Gang

Jagadish, Chennupati

Titov, A I

Publisher

Elsevier

Abstract

The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid nitrogen temperature (LN2) is studied by a combination of Rutherford backscattering/channeling spectrometry and transmission electron microscopy. Results

Keywords

Keywords: Crystal defects; Gallium compounds; Ion bombardment; Rutherford backscattering spectroscopy; Thermal effects; Transmission electron microscopy; Channeling spectrometry; Ion implantation Collision cascade; Defects; GaN; Ion implantation

URI

http://hdl.handle.net/1885/71934

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/S0168-583X(01)01309-X

Restricted until

2037-12-31

Downloads

File

Description

01_Kucheyev_Effect_of_Ion_Species_on_2002.pdf (157.59 KB)

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