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Clusterization of vacancy defects in ZnO irradiated with 2 MeV O+

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dc.contributor.authorZubiaga, A
dc.contributor.authorTuomisto, F
dc.contributor.authorColeman, Victoria A
dc.contributor.authorJagadish, Chennupati
dc.date.accessioned2015-12-08T22:36:34Z
dc.date.available2015-12-08T22:36:34Z
dc.date.issued2008
dc.date.updated2015-12-08T09:51:12Z
dc.description.abstractSlow positrons have been used to study ZnO layers grown on a-axis sapphire and irradiated by 2 MeV O+ ions to fluences from 1012 cm-2 to 1017 cm-2. At low fluences Zn vacancies are observed, and their introduction rate is estimated as 2000 cm-1. At the highest fluences of 1016-1017 cm-2 vacancy clusters are formed. The extent of the primary damage and its recovery is discussed.
dc.identifier.issn0169-4332
dc.identifier.urihttp://hdl.handle.net/1885/35305
dc.publisherElsevier
dc.sourceApplied Surface Science
dc.subjectKeywords: Corundum; Semiconducting zinc compounds; Zinc alloys; Zinc oxide; Clusterization; Irradiation; Point-Defects; Positron Spectroscopy; Slow positrons; Thin-Films; Vacancy Defects; ZnO; ZnO layers; Vacancies Irradiation; Point-Defects; Positron Spectroscopy; Thin-Films; ZnO
dc.titleClusterization of vacancy defects in ZnO irradiated with 2 MeV O+
dc.typeJournal article
local.bibliographicCitation.lastpage236
local.bibliographicCitation.startpage234
local.contributor.affiliationZubiaga, A, Helsinki University of Technology
local.contributor.affiliationTuomisto, F, Helsinki University of Technology
local.contributor.affiliationColeman, Victoria A, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidColeman, Victoria A, u4014712
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.notesImported from ARIES
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationu3488905xPUB123
local.identifier.citationvolume255
local.identifier.doi10.1016/j.apsusc.2008.05.197
local.identifier.scopusID2-s2.0-53049098432
local.identifier.thomsonID000259726900063
local.type.statusPublished Version

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