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Clusterization of vacancy defects in ZnO irradiated with 2 MeV O+

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Date

2008

Authors

Zubiaga, A
Tuomisto, F
Coleman, Victoria A
Jagadish, Chennupati

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

Slow positrons have been used to study ZnO layers grown on a-axis sapphire and irradiated by 2 MeV O+ ions to fluences from 1012 cm-2 to 1017 cm-2. At low fluences Zn vacancies are observed, and their introduction rate is estimated as 2000 cm-1. At the highest fluences of 1016-1017 cm-2 vacancy clusters are formed. The extent of the primary damage and its recovery is discussed.

Description

Keywords

Keywords: Corundum; Semiconducting zinc compounds; Zinc alloys; Zinc oxide; Clusterization; Irradiation; Point-Defects; Positron Spectroscopy; Slow positrons; Thin-Films; Vacancy Defects; ZnO; ZnO layers; Vacancies Irradiation; Point-Defects; Positron Spectroscopy; Thin-Films; ZnO

Citation

URI

http://hdl.handle.net/1885/35305

Collections

ANU Research Publications

Source

Applied Surface Science

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.apsusc.2008.05.197

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