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Defect generation at the Si–SiO₂ interface following corona charging

Date

2007-06-28

Authors

Jin, Hao
Weber, K. J.
Dang, N. C.
Jellett, W. E.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

A combination of capacitance-voltage and lifetime decay measurements is used to show that corona biasing of silicon oxidized samples results in the generation of additional interface defects and an increase in surface recombination. The onset of interface degradation occurs at relatively low electric fields, estimated to be less than ∼+∕−1.2MV∕cm. The majority of the defects generated by corona biasing can be removed by a short annealing at 400°C. The results are consistent with the hypothesis that atomic hydrogen is chiefly responsible for the observed degradation. Corona biasing, even at low electric fields, cannot be relied on as a noninvasive characterization tool.

Description

Keywords

Keywords: Annealing; Degradation; Electric field effects; Electric variables measurement; Silica; Surface defects; Atomic hydrogen; Capacitance-voltage characteristics; Corona charging; Defect generation; Interfaces (materials)

Citation

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.2749867

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