Defect generation at the Si–SiO₂ interface following corona charging

dc.contributor.authorJin, Hao
dc.contributor.authorWeber, K. J.
dc.contributor.authorDang, N. C.
dc.contributor.authorJellett, W. E.
dc.date.accessioned2015-12-02T00:33:23Z
dc.date.available2015-12-02T00:33:23Z
dc.date.issued2007-06-28
dc.date.updated2015-12-09T10:43:13Z
dc.description.abstractA combination of capacitance-voltage and lifetime decay measurements is used to show that corona biasing of silicon oxidized samples results in the generation of additional interface defects and an increase in surface recombination. The onset of interface degradation occurs at relatively low electric fields, estimated to be less than ∼+∕−1.2MV∕cm. The majority of the defects generated by corona biasing can be removed by a short annealing at 400°C. The results are consistent with the hypothesis that atomic hydrogen is chiefly responsible for the observed degradation. Corona biasing, even at low electric fields, cannot be relied on as a noninvasive characterization tool.
dc.description.sponsorshipSupport from the Australian Research Council for this work is acknowledged.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16958
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 2/12/15). Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2749867
dc.sourceApplied Physics Letters
dc.subjectKeywords: Annealing; Degradation; Electric field effects; Electric variables measurement; Silica; Surface defects; Atomic hydrogen; Capacitance-voltage characteristics; Corona charging; Defect generation; Interfaces (materials)
dc.titleDefect generation at the Si–SiO₂ interface following corona charging
dc.typeJournal article
local.bibliographicCitation.issue26en_AU
local.bibliographicCitation.lastpage3
local.bibliographicCitation.startpage262109en_AU
local.contributor.affiliationJin, Hao, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationWeber, Klaus, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationCuong, Dang, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationJellett, Wendy, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.authoremailhao.jin@anu.edu.auen_AU
local.contributor.authoruidu4065013en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor091099en_AU
local.identifier.absfor091299en_AU
local.identifier.absseo850504en_AU
local.identifier.ariespublicationu4251866xPUB378en_AU
local.identifier.citationvolume90en_AU
local.identifier.doi10.1063/1.2749867en_AU
local.identifier.scopusID2-s2.0-34547282814
local.identifier.uidSubmittedByu3488905en_AU
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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