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Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition

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dc.contributor.authorLei, W.en_AU
dc.contributor.authorJagadish, C.en_AU
dc.contributor.authorRen, Q. J.en_AU
dc.contributor.authorLu, J.en_AU
dc.contributor.authorChen, Z. H.en_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-09-17T02:47:42Z
dc.date.available2015-09-17T02:47:42Z
dc.date.issued2010
dc.date.updated2015-12-10T07:34:28Z
dc.description.abstractThis paper presents a study on the strain relaxation and phonon confinement effect in InAsSb/InP quantum dashes QDashes. The phonon mode with a frequency between that of InAs-like longitudinal optical mode and that of InP transverse optical mode is determined to be originated from InAsSb QDashes. Despite the small height of the QDashes, their phonon frequency is found to be mainly determined by the strain relaxation in the dashes. With increasing InAsSb deposition thickness and Sb composition in InAsSb dashes, the phonon mode shows an upward shift of its frequency due to the increased compressive strain.
dc.description.sponsorshipFinancial support from Australian Research Council DP0774366 is gratefully acknowledged.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15514
dc.publisherAmerican Institute of Physics
dc.rightsPublishers version/PDF may be used on author's personal website, institutional website or institutional repository http://www.sherpa.ac.uk/romeo/issn/0003-6951 Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at 10.1063/1.3522889
dc.sourceApplied Physics Letters
dc.subjectstrain relaxation
dc.subjectphonon confinement effect
dc.titleStrain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition
dc.typeJournal article
local.bibliographicCitation.issue22en_AU
local.bibliographicCitation.startpage223108en_AU
local.contributor.affiliationLei, Wen, College of Physical and Mathematical Sciences, Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationRen, Q J, Fudan University, Chinaen_AU
local.contributor.affiliationLu, Jian, Fudan University, Chinaen_AU
local.contributor.affiliationChen, Zhanghai H, Fudan University, Chinaen_AU
local.contributor.authoruidLei, Wen, u4450995en_AU
local.contributor.authoruidTan, Hoe Hark, u9302338en_AU
local.contributor.authoruidJagadish, Chennupati, u9212349en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020406en_AU
local.identifier.ariespublicationf2965xPUB487en_AU
local.identifier.citationvolume97en_AU
local.identifier.doi10.1063/1.3522889en_AU
local.identifier.scopusID2-s2.0-78650658515
local.identifier.thomsonID000284965000069
local.type.statusPublished Versionen_AU

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