Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition
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Lei, W.
Jagadish, C.
Ren, Q. J.
Lu, J.
Chen, Z. H.
Tan, Hark Hoe
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American Institute of Physics
Abstract
This paper presents a study on the strain relaxation and phonon confinement effect in InAsSb/InP
quantum dashes QDashes. The phonon mode with a frequency between that of InAs-like
longitudinal optical mode and that of InP transverse optical mode is determined to be originated
from InAsSb QDashes. Despite the small height of the QDashes, their phonon frequency is found
to be mainly determined by the strain relaxation in the dashes. With increasing InAsSb deposition
thickness and Sb composition in InAsSb dashes, the phonon mode shows an upward shift of its
frequency due to the increased compressive strain.
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Applied Physics Letters
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