Large Melting-point Hysteresis of Ge Nanocrystals Embedded in SiO 2

Xu, Q; Sharp, I D; Yuan, C W; Yi, D O; Liao, C Y; Glaeser, Andreas M; Minor, A M; Beeman, J W; Ridgway, Mark C; Kluth, Patrick; Ager, J W; Chrzan, D C; Haller, E E

Large Melting-point Hysteresis of Ge Nanocrystals Embedded in SiO 2

Date

2006

Authors

Xu, Q

Sharp, I D

Yuan, C W

Yi, D O

Liao, C Y

Glaeser, Andreas M

Minor, A M

Beeman, J W

Ridgway, Mark C

Kluth, Patrick

Publisher

American Physical Society

Abstract

The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (±17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled