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Nonlinear Optical Absorption and Temporal Response of Arsenic-and Oxygen-Implantated GaAs

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Date

1999

Authors

Lederer, Maximilian
Luther-Davies, Barry
Jagadish, Chennupati
Haiml, M
Siegner, U
Keller, U
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The nonlinear optical absorption of arsenic and oxygen implanted epitaxial GaAs for a range of ion doses and annealing temperatures were examined. Results showed that ion implantation decreases response time (τA) and parameter (Mmax), with the decrease i

Description

Keywords

Keywords: Amorphization; Annealing; Ion implantation; Light absorption; Light modulation; Nonlinear optics; Nonlinear optical absorption; Semiconducting gallium arsenide

Citation

URI

http://hdl.handle.net/1885/93421

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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01_Lederer_Nonlinear_Optical_Absorption_1999.pdf (433.93 KB)

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