Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells
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Lu, Hao Feng
Fu, Lan
Jolley, Greg
Tan, Hark Hoe
Tatavarti, Sudersena Rao
Jagadish, Chennupati
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American Institute of Physics
Abstract
Self-assembledIn₀.₅Ga₀.₅As/GaAsquantum dotsolar cell (QDSC) was grown by metal organic chemical vapor deposition. Systematic measurements of dark current versus voltage (I-V) characteristics were carried out from 30 to 310 K. Compared with the reference GaAssolar cell, the QDSC exhibits larger dark current however its ideality factor (n) was smaller, which cannot be straightly interpreted by the conventional diode models. These results are important for the fundamental understanding of QDSC properties and further implementation of new solar cell designs for improved efficiency.
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Applied Physics Letters
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