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Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells

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Date

2011-05-06

Authors

Lu, Hao Feng
Fu, Lan
Jolley, Greg
Tan, Hark Hoe
Tatavarti, Sudersena Rao
Jagadish, Chennupati

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics

Abstract

Self-assembledIn₀.₅Ga₀.₅As/GaAsquantum dotsolar cell (QDSC) was grown by metal organic chemical vapor deposition. Systematic measurements of dark current versus voltage (I-V) characteristics were carried out from 30 to 310 K. Compared with the reference GaAssolar cell, the QDSC exhibits larger dark current however its ideality factor (n) was smaller, which cannot be straightly interpreted by the conventional diode models. These results are important for the fundamental understanding of QDSC properties and further implementation of new solar cell designs for improved efficiency.

Description

Keywords

Keywords: Current properties; GaAs solar cells; Ideality factors; InGaAs/GaAs; Metalorganic chemical vapor deposition; Quantum dot solar cells; Self-assembled; Solar cell design; Temperature dependence; Dark currents; Gallium; Metallorganic chemical vapor depositio

Citation

URI

http://hdl.handle.net/1885/15520

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.3586251

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