Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells
Date
2011-05-06
Authors
Lu, Hao Feng
Fu, Lan
Jolley, Greg
Tan, Hark Hoe
Tatavarti, Sudersena Rao
Jagadish, Chennupati
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract
Self-assembledIn₀.₅Ga₀.₅As/GaAsquantum dotsolar cell (QDSC) was grown by metal organic chemical vapor deposition. Systematic measurements of dark current versus voltage (I-V) characteristics were carried out from 30 to 310 K. Compared with the reference GaAssolar cell, the QDSC exhibits larger dark current however its ideality factor (n) was smaller, which cannot be straightly interpreted by the conventional diode models. These results are important for the fundamental understanding of QDSC properties and further implementation of new solar cell designs for improved efficiency.
Description
Keywords
Keywords: Current properties; GaAs solar cells; Ideality factors; InGaAs/GaAs; Metalorganic chemical vapor deposition; Quantum dot solar cells; Self-assembled; Solar cell design; Temperature dependence; Dark currents; Gallium; Metallorganic chemical vapor depositio
Citation
Collections
Source
Applied Physics Letters
Type
Journal article
Book Title
Entity type
Access Statement
License Rights
Restricted until
Downloads
File
Description
Published Version