Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells

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dc.contributor.authorLu, Hao Feng
dc.contributor.authorFu, Lan
dc.contributor.authorJolley, Greg
dc.contributor.authorTan, Hark Hoe
dc.contributor.authorTatavarti, Sudersena Rao
dc.contributor.authorJagadish, Chennupati
dc.date.accessioned2015-09-17T04:36:29Z
dc.date.available2015-09-17T04:36:29Z
dc.date.issued2011-05-06
dc.date.updated2016-02-24T08:18:12Z
dc.description.abstractSelf-assembledIn₀.₅Ga₀.₅As/GaAsquantum dotsolar cell (QDSC) was grown by metal organic chemical vapor deposition. Systematic measurements of dark current versus voltage (I-V) characteristics were carried out from 30 to 310 K. Compared with the reference GaAssolar cell, the QDSC exhibits larger dark current however its ideality factor (n) was smaller, which cannot be straightly interpreted by the conventional diode models. These results are important for the fundamental understanding of QDSC properties and further implementation of new solar cell designs for improved efficiency.
dc.description.sponsorshipThe authors would like to acknowledge financial support from the Australian Research Council and facility support from the Australian National Fabrication Facility ACT node.en_AU
dc.format4 pages
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15520
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 17/09/15)
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://dx.doi.org/10.1063/1.3586251.
dc.sourceApplied Physics Letters
dc.subjectKeywords: Current properties; GaAs solar cells; Ideality factors; InGaAs/GaAs; Metalorganic chemical vapor deposition; Quantum dot solar cells; Self-assembled; Solar cell design; Temperature dependence; Dark currents; Gallium; Metallorganic chemical vapor depositio
dc.titleTemperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells
dc.typeJournal article
dcterms.dateAccepted2011-04-13
local.bibliographicCitation.issue18en_AU
local.bibliographicCitation.lastpage3
local.bibliographicCitation.startpage183509en_AU
local.contributor.affiliationLu, Hao Feng, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationFu, Lan, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJolley, Greg, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationRao Tatavarti, Sudersena, MicroLink Devices, United States of America, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoruidu4605869en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020499en_AU
local.identifier.absfor091203en_AU
local.identifier.absseo850504en_AU
local.identifier.absseo970102en_AU
local.identifier.ariespublicationf2965xPUB1831en_AU
local.identifier.citationvolume98en_AU
local.identifier.doi10.1063/1.3586251en_AU
local.identifier.scopusID2-s2.0-79957499076
local.identifier.thomsonID000290392300073
local.identifier.uidSubmittedByu3488905en_AU
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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