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Ultrathin (<10nm) Nb 2O 5/NbO 2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications

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Date

2012

Authors

Kim, Seonghyun
Liu, Xinjun
Park, Jubong
Jung, Seungjae
Lee, Wootae
Woo, Jiyong
Shin, Jungho
Choi, Godeuni
Cho, Chumhum
Park, Sangsu

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

We report, for the first time, the novel concept of ultrathin (∼10nm) W/NbO x/Pt device with both threshold switching (TS) and memory switching (MS) characteristics. Excellent TS characteristics of NbO 2, such as high temperature stability (∼160°C),

Description

Keywords

Keywords: Fast switching; High density; High temperature stability; Hybrid memories; Memory switching; Novel concept; Threshold switching; Ultra-thin; Platinum; Random access storage; Niobium oxide

Citation

URI

http://hdl.handle.net/1885/65893

Collections

ANU Research Publications

Source

Digest of Technical Papers - Symposium on VLSI Technology

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/VLSIT.2012.6242508

Restricted until

2037-12-31

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Description
01_Kim_Ultrathin_(<10nm)_Nb_2O_5/NbO_2012.PDF (2.29 MB)

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