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Structural and Optical Characterization of Vertical GaAs / GaP Core-Shell Nanowires Grown on Si Substrates

dc.contributor.authorKang, Jung-Hyunen_AU
dc.contributor.authorGao, Qiangen_AU
dc.contributor.authorJoyce, Hannah Jen_AU
dc.contributor.authorKim, Yongen_AU
dc.contributor.authorGuo, YaNanen_AU
dc.contributor.authorXu, Hongyien_AU
dc.contributor.authorZou, Jinen_AU
dc.contributor.authorFickenscher, M Aen_AU
dc.contributor.authorSmith, Leigh Men_AU
dc.contributor.authorJackson, Howard Een_AU
dc.contributor.authorYarrison-Rice, Jan Men_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialCanberra Australia
dc.date.accessioned2015-12-10T22:20:55Z
dc.date.createdDecember 12-15 2010
dc.date.issued2010
dc.date.updated2016-02-24T10:01:25Z
dc.description.abstractGaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires.
dc.identifier.isbn9781424473335
dc.identifier.urihttp://hdl.handle.net/1885/52148
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010)
dc.source2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
dc.source.urihttp://commad2010.anu.edu.au/
dc.subjectKeywords: Core-shell nanowires; Emission energies; GaAs; Optical characterization; Shell thickness; Si substrates; Si surfaces; Si(111) substrate; Two-temperature; Crystal structure; Gallium arsenide; Microelectronics; Nanowires; Semiconducting gallium; Silicon; Ga
dc.titleStructural and Optical Characterization of Vertical GaAs / GaP Core-Shell Nanowires Grown on Si Substrates
dc.typeConference paper
local.bibliographicCitation.lastpage58
local.bibliographicCitation.startpage57
local.contributor.affiliationKang, Jung-Hyun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJoyce, Hannah J, University of Oxford
local.contributor.affiliationKim, Yong, Dong-A University
local.contributor.affiliationGuo, YaNan, University of Queensland
local.contributor.affiliationXu, Hongyi, University of Queensland
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationFickenscher, M A, University of Cincinnati
local.contributor.affiliationSmith, Leigh M , University of Cincinnati
local.contributor.affiliationJackson, Howard E , University of Cincinnati
local.contributor.affiliationYarrison-Rice, Jan M , University of Miami
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidKang, Jung-Hyun, u4335853
local.contributor.authoruidGao, Qiang, u4006742
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationU3488905xPUB240
local.identifier.doi10.1109/COMMAD.2010.5699778
local.identifier.scopusID2-s2.0-79951728813
local.type.statusPublished Version

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