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Structural and Optical Characterization of Vertical GaAs / GaP Core-Shell Nanowires Grown on Si Substrates

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Date

2010

Authors

Kang, Jung-Hyun
Gao, Qiang
Joyce, Hannah J
Kim, Yong
Guo, YaNan
Xu, Hongyi
Zou, Jin
Fickenscher, M A
Smith, Leigh M
Jackson, Howard E

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires.

Description

Keywords

Keywords: Core-shell nanowires; Emission energies; GaAs; Optical characterization; Shell thickness; Si substrates; Si surfaces; Si(111) substrate; Two-temperature; Crystal structure; Gallium arsenide; Microelectronics; Nanowires; Semiconducting gallium; Silicon; Ga

Citation

URI

http://hdl.handle.net/1885/52148

Collections

ANU Research Publications

Source

2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2010.5699778

Restricted until

2037-12-31

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01_Kang_Structural_and_Optical_2010.pdf (969.25 KB)

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