Investigation of the thermal stability of MoOx as hole-selective contacts for Si solar cells
dc.contributor.author | Zhang, Tian | |
dc.contributor.author | Lee, Chang-Yeh | |
dc.contributor.author | Wan, Yimao | |
dc.contributor.author | Lim, Sean | |
dc.contributor.author | Hoex, Bram | |
dc.date.accessioned | 2021-11-09T00:40:32Z | |
dc.date.available | 2021-11-09T00:40:32Z | |
dc.date.issued | 2018 | |
dc.date.updated | 2020-11-23T11:45:44Z | |
dc.description.abstract | The stoichiometry and work function of molybdenum oxide (MoOx) are of crucial importance for its performance as hole selective contact for crystalline silicon solar cells. Hydrogenated amorphous silicon (a-Si:H) is typically used as an interface passivation layer in combination with MoOx to reduce surface recombination. As the fabrication process of a solar cell typically contains subsequent high-temperature processes, the consideration of thermal stability of MoOx with and without a-Si:H becomes critical. In this work, in situ x-ray spectroscopy (XPS)/ultraviolet photoelectron spectroscopy and Fourier transform infrared spectroscopy in the temperature range from 300 K to 900 K are used to investigate the thermal stability of MoOx with and without a-Si:H. In addition, both the passivation and contact performance are studied by evaluating the surface saturation current density J0s, carrier lifetime τeff, and contact resistivity ρc. The XPS results reveal that the as-evaporated MoOx on top of both c-Si and a-Si:H is sub-stoichiometric, and the work function of both films is higher than 6 eV. While after in situ annealing, the evolution of MoOx phase on top of a-Si:H shows a different behavior compared to it on c-Si which is attributed to H diffusion from a-Si:H after 600 K, whereas the work function shows a similar trend as a function of the annealing temperature. The J0s of a p-type Si symmetrically passivated by MoOx is found to be 187 fA/cm2 and the ρc is ∼82.5 mΩ·cm2 in the as-evaporated state. With a-Si interface passivation layer, J0s is significantly lower at 5.39 fA/cm2. The J0s and the ρc increase after post-deposition annealing. The evolution of these functional properties can be attributed to the material properties. | en_AU |
dc.description.sponsorship | This work was funded by the Qatar National Research Fund (a member of Qatar Foundation, NPRP Grant No. NPRP9- 021–009) and by ARENA as part of ARENA’s Research and Development Program – Solar PV Research (Grant No. 2017/ RND007) | en_AU |
dc.format.mimetype | application/pdf | en_AU |
dc.identifier.issn | 0021-8979 | en_AU |
dc.identifier.uri | http://hdl.handle.net/1885/251663 | |
dc.language.iso | en_AU | en_AU |
dc.provenance | https://v2.sherpa.ac.uk/id/publication/9867..."The Published Version can be archived in a Non-Commercial Institutional Repository" from SHERPA/RoMEO site (as at 9/11/2021). This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in (Zhang, Tian, et al. "Investigation of the thermal stability of MoOx as hole-selective contacts for Si solar cells." Journal of Applied Physics 124.7 (2018): 073106.) and may be found at https://dx.doi.org/10.1063/1.5041774. | en_AU |
dc.publisher | American Institute of Physics (AIP) | en_AU |
dc.rights | © 2018 American Institute of Physics | en_AU |
dc.source | Journal of Applied Physics | en_AU |
dc.title | Investigation of the thermal stability of MoOx as hole-selective contacts for Si solar cells | en_AU |
dc.type | Journal article | en_AU |
dcterms.accessRights | Open Access | en_AU |
local.bibliographicCitation.issue | 7 | en_AU |
local.bibliographicCitation.lastpage | 073106-8 | en_AU |
local.bibliographicCitation.startpage | 073106-1 | en_AU |
local.contributor.affiliation | Zhang, Tian, The University of New South Wales | en_AU |
local.contributor.affiliation | Lee, Chang-Yeh, University of New South Wales | en_AU |
local.contributor.affiliation | Wan, Yimao, College of Engineering and Computer Science, ANU | en_AU |
local.contributor.affiliation | Lim, Sean, University of New South Wales | en_AU |
local.contributor.affiliation | Hoex, Bram, The University of New South Wales | en_AU |
local.contributor.authoremail | u4793143@anu.edu.au | en_AU |
local.contributor.authoruid | Wan, Yimao, u4793143 | en_AU |
local.description.notes | Imported from ARIES | en_AU |
local.identifier.absfor | 020503 - Nonlinear Optics and Spectroscopy | en_AU |
local.identifier.absfor | 020504 - Photonics, Optoelectronics and Optical Communications | en_AU |
local.identifier.absfor | 090605 - Photodetectors, Optical Sensors and Solar Cells | en_AU |
local.identifier.absseo | 850504 - Solar-Photovoltaic Energy | en_AU |
local.identifier.ariespublication | a383154xPUB10630 | en_AU |
local.identifier.citationvolume | 124 | en_AU |
local.identifier.doi | 10.1063/1.5041774 | en_AU |
local.identifier.scopusID | 2-s2.0-85052712272 | |
local.identifier.uidSubmittedBy | a383154 | en_AU |
local.publisher.url | http://jap.aip.org/ | en_AU |
local.type.status | Published Version | en_AU |
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