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Temperature dependence of blistering in hydrogen implanted Si and Ge

dc.contributor.authorPyke, Daniel
dc.contributor.authorElliman, Robert
dc.contributor.authorMcCallum, Jeffrey C.
dc.date.accessioned2015-12-13T22:30:50Z
dc.date.issued2013
dc.date.updated2016-02-24T09:25:21Z
dc.description.abstractThe temperature dependence of hydrogen blistering rates are measured in (100) Si, (111) Si and (100) Ge substrates implanted with 40 keV H-ions to a fluence of 6 × 1016 H cm-2 using real-time imaging of samples during annealing. The time taken for bliste
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/75023
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Blister; Blister formation; Dissociation energies; Hydrogen blistering; Hydrogen migration; Single activation energy; Temperature dependence; Temperature range; Activation energy; Germanium; Silicon; Temperature distribution; Hydrogen Blister; Germanium; Hydrogen; Silicon
dc.titleTemperature dependence of blistering in hydrogen implanted Si and Ge
dc.typeJournal article
local.bibliographicCitation.lastpage32
local.bibliographicCitation.startpage29
local.contributor.affiliationPyke, Daniel, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationMcCallum, Jeffrey C, University of Melbourne
local.contributor.authoruidPyke, Daniel, u4380198
local.contributor.authoruidElliman, Robert, u9012877
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor091205 - Functional Materials
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absfor091204 - Elemental Semiconductors
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.absseo970109 - Expanding Knowledge in Engineering
local.identifier.absseo970110 - Expanding Knowledge in Technology
local.identifier.ariespublicationf5625xPUB4429
local.identifier.citationvolume307
local.identifier.doi10.1016/j.nimb.2012.10.037
local.identifier.scopusID2-s2.0-84885178398
local.identifier.thomsonID000321722200008
local.type.statusPublished Version

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