Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Temperature dependence of blistering in hydrogen implanted Si and Ge

Date

Authors

Pyke, Daniel

Elliman, Robert

McCallum, Jeffrey C.

Publisher

Elsevier

Abstract

The temperature dependence of hydrogen blistering rates are measured in (100) Si, (111) Si and (100) Ge substrates implanted with 40 keV H-ions to a fluence of 6 × 1016 H cm-2 using real-time imaging of samples during annealing. The time taken for bliste

Keywords

Keywords: Blister; Blister formation; Dissociation energies; Hydrogen blistering; Hydrogen migration; Single activation energy; Temperature dependence; Temperature range; Activation energy; Germanium; Silicon; Temperature distribution; Hydrogen Blister; Germanium; Hydrogen; Silicon

URI

http://hdl.handle.net/1885/75023

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/j.nimb.2012.10.037

Restricted until

2037-12-31

Downloads

File

Description

01_Pyke_Temperature_dependence_of_2013.pdf (1.72 MB)