Nitrogen-induced enhancement of the free electron concentration in Sulfur implanted GaNxAs1-x

Date

2000

Authors

Yu, Kin Man
Walukiewicz, W
Shan, Wei
Wu, J
Ager, J W
Haller, E E
Garza, J
Ridgway, Mark C

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaNxAs1-x thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of >6×1018cm-3 for implanted S concentration higher

Description

Keywords

Citation

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31