High-endurance megahertz electrical self-oscillation in Ti/NbO x bilayer structures

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dc.contributor.authorLi, Shuai
dc.contributor.authorLiu, Xinjun
dc.contributor.authorNandi, Sanjoy
dc.contributor.authorVenkatachalam, Dinesh
dc.contributor.authorElliman, Robert
dc.date.accessioned2015-12-13T22:15:39Z
dc.date.issued2015
dc.date.updated2021-08-01T08:25:30Z
dc.description.abstractElectrical self-oscillation is reported for a Ti/NbO<inf>x</inf> negative differential resistance device incorporated in a simple electric circuit configuration. Measurements confirm stable operation of the oscillator at source voltages as low as 1.06 V,
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/70502
dc.publisherAmerican Institute of Physics (AIP)
dc.rightsAuthor/s retain copyright
dc.sourceApplied Physics Letters
dc.subjectKeywords: Physical properties; Bi-layer structure; Circuit configurations; Device operations; Low operating voltage; Negative differential resistance device; Neuromorphic computing; Operating frequency; Self-oscillations; Negative resistance
dc.titleHigh-endurance megahertz electrical self-oscillation in Ti/NbO x bilayer structures
dc.typeJournal article
dcterms.accessRightsOpen Accessen_AU
local.bibliographicCitation.issue21
local.bibliographicCitation.lastpage4
local.bibliographicCitation.startpage1
local.contributor.affiliationLi, Shuai, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationNandi, Sanjoy, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationVenkatachalam, Dinesh, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.authoremailu4748327@anu.edu.au
local.contributor.authoruidLi, Shuai, u4748327
local.contributor.authoruidLiu, Xinjun, u5361480
local.contributor.authoruidNandi, Sanjoy, u4939839
local.contributor.authoruidVenkatachalam, Dinesh, u4575027
local.contributor.authoruidElliman, Robert, u9012877
local.description.notesImported from ARIES
local.identifier.absfor100712 - Nanoscale Characterisation
local.identifier.absfor020400 - CONDENSED MATTER PHYSICS
local.identifier.absfor100705 - Nanoelectronics
local.identifier.ariespublicationa383154xPUB2332
local.identifier.citationvolume106
local.identifier.doi10.1063/1.4921745
local.identifier.scopusID2-s2.0-84930662420
local.identifier.thomsonID000355631400029
local.identifier.uidSubmittedBya383154
local.type.statusPublished Version

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