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High-endurance megahertz electrical self-oscillation in Ti/NbO x bilayer structures

Date

Authors

Li, Shuai

Liu, Xinjun

Nandi, Sanjoy

Venkatachalam, Dinesh

Elliman, Robert

Publisher

American Institute of Physics (AIP)

Abstract

Electrical self-oscillation is reported for a Ti/NbO<inf>x</inf> negative differential resistance device incorporated in a simple electric circuit configuration. Measurements confirm stable operation of the oscillator at source voltages as low as 1.06 V,

Keywords

Keywords: Physical properties; Bi-layer structure; Circuit configurations; Device operations; Low operating voltage; Negative differential resistance device; Neuromorphic computing; Operating frequency; Self-oscillations; Negative resistance

URI

http://hdl.handle.net/1885/70502

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Access Statement

Open Access

DOI

10.1063/1.4921745

Downloads

File

Description

01_Li_High-endurance_megahertz_2015.pdf (869.32 KB)