Quantification of the zinc dopant concentration in GaAs nanowires

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dc.contributor.authorBurgess, Timothyen_AU
dc.contributor.authorDu, S.en_AU
dc.contributor.authorGault, B.en_AU
dc.contributor.authorGao, Qiangen_AU
dc.contributor.authorZheng, Rongkunen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialMelbourne Australia
dc.date.accessioned2015-12-10T22:56:19Z
dc.date.createdDecember 12-14 2012
dc.date.issued2012
dc.date.updated2016-02-24T10:19:32Z
dc.description.abstractThe zinc dopant concentration and distribution in GaAs nanowires is quantified by atom probe tomography. Material deposited radially by a vapour-solid process is shown to have a significantly higher dopant concentration in comparison to the core which grows by the vapour-liquid-solid process. Zinc concentrations of up to 7×1019 and 5×1020 atoms/cm3 are measured for core and shell materials respectively. Dopant activation is confirmed by electrical characterization which demonstrates an orders of magnitude increase in nanowire conductivity.
dc.identifier.isbn9781467330459
dc.identifier.urihttp://hdl.handle.net/1885/60190
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012)
dc.sourceCOMMAD 2012 Proceedings
dc.source.urihttp://commad2012.physics.unimelb.edu.au/
dc.subjectKeywords: Atom probe tomography; Dopant activation; Dopant concentrations; Electrical characterization; Nanowire conductivity; Orders of magnitude; Shell materials; Zinc concentration; Gallium arsenide; Microelectronics; Semiconducting gallium; Semiconductor doping
dc.titleQuantification of the zinc dopant concentration in GaAs nanowires
dc.typeConference paper
local.bibliographicCitation.lastpage42
local.bibliographicCitation.startpage41
local.contributor.affiliationBurgess, Timothy, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationDu, S., University of Sydney
local.contributor.affiliationGault, B., McMaster University
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationZheng, Rongkun, University of Sydney
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidBurgess, Timothy, u4484390
local.contributor.authoruidGao, Qiang, u4006742
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationU3594520xPUB527
local.identifier.doi10.1109/COMMAD.2012.6472350
local.identifier.scopusID2-s2.0-84875596602
local.type.statusPublished Version

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