Quantification of the zinc dopant concentration in GaAs nanowires

Date

2012

Authors

Burgess, Timothy
Du, S.
Gault, B.
Gao, Qiang
Zheng, Rongkun
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

The zinc dopant concentration and distribution in GaAs nanowires is quantified by atom probe tomography. Material deposited radially by a vapour-solid process is shown to have a significantly higher dopant concentration in comparison to the core which grows by the vapour-liquid-solid process. Zinc concentrations of up to 7×1019 and 5×1020 atoms/cm3 are measured for core and shell materials respectively. Dopant activation is confirmed by electrical characterization which demonstrates an orders of magnitude increase in nanowire conductivity.

Description

Keywords

Keywords: Atom probe tomography; Dopant activation; Dopant concentrations; Electrical characterization; Nanowire conductivity; Orders of magnitude; Shell materials; Zinc concentration; Gallium arsenide; Microelectronics; Semiconducting gallium; Semiconductor doping

Citation

Source

COMMAD 2012 Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2012.6472350

Restricted until

2037-12-31