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Structural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition

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dc.contributor.authorGuo, Y. N.en_AU
dc.contributor.authorZou, J.en_AU
dc.contributor.authorPaladugu, Mohanchanden_AU
dc.contributor.authorWang, H.en_AU
dc.contributor.authorGao, Q.en_AU
dc.contributor.authorJagadish, C.en_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-10-23T02:59:53Z
dc.date.available2015-10-23T02:59:53Z
dc.date.issued2006-12-06
dc.date.updated2015-12-08T03:01:28Z
dc.description.abstractHighly lattice mismatched (7.8%) GaAs∕GaSbnanowireheterostructures were grown by metal-organic chemical vapor deposition and their detailed structural characteristics were determined by electron microscopy. The facts that (i) no defects have been found in GaSb and its interfaces with GaAs and (ii) the lattice mismatch between GaSb∕GaAs was fully relaxed suggest that the growth of GaSbnanowires is purely governed by the thermodynamics. The authors believe that the low growth rate of GaSbnanowires leads to the equilibrium growth.
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16058
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 23/10/15). Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2402234
dc.sourceApplied Physics Letters
dc.subjectKeywords: Electron microscopy; Heterojunction bipolar transistors; Metallorganic chemical vapor deposition; Semiconducting gallium arsenide; Thermodynamics; Lattice mismatch; Nanowire heterostructures; Nanowires; Nanostructured materials
dc.titleStructural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition
dc.typeJournal article
local.bibliographicCitation.issue23en_AU
local.bibliographicCitation.startpage231917en_AU
local.contributor.affiliationGuo, Yanan, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationZou, Jin, University of Queensland, Australiaen_AU
local.contributor.affiliationPaladugu, Mohanchand, University of Queensland, Australiaen_AU
local.contributor.affiliationWang, Hui, University of Queensland, Australiaen_AU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoruidu4006742en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020406en_AU
local.identifier.absfor100799en_AU
local.identifier.ariespublicationU3488905xPUB2919en_AU
local.identifier.citationvolume89en_AU
local.identifier.doi10.1063/1.2402234en_AU
local.identifier.scopusID2-s2.0-33845437702
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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