Structural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition

Date

2006-12-06

Authors

Guo, Y. N.
Zou, J.
Paladugu, Mohanchand
Wang, H.
Gao, Q.
Jagadish, C.
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Highly lattice mismatched (7.8%) GaAs∕GaSbnanowireheterostructures were grown by metal-organic chemical vapor deposition and their detailed structural characteristics were determined by electron microscopy. The facts that (i) no defects have been found in GaSb and its interfaces with GaAs and (ii) the lattice mismatch between GaSb∕GaAs was fully relaxed suggest that the growth of GaSbnanowires is purely governed by the thermodynamics. The authors believe that the low growth rate of GaSbnanowires leads to the equilibrium growth.

Description

Keywords

Keywords: Electron microscopy; Heterojunction bipolar transistors; Metallorganic chemical vapor deposition; Semiconducting gallium arsenide; Thermodynamics; Lattice mismatch; Nanowire heterostructures; Nanowires; Nanostructured materials

Citation

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

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DOI

10.1063/1.2402234

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