Bond length contraction in Au nanocrystals formed by ion implantation into thin SiO[sub 2]
| dc.contributor.author | Kluth, P. | |
| dc.contributor.author | Johannessen, B. | |
| dc.contributor.author | Giraud, V. | |
| dc.contributor.author | Cheung, A. | |
| dc.contributor.author | Glover, C. J. | |
| dc.contributor.author | Azevedo, G. de M. | |
| dc.contributor.author | Foran, G. J. | |
| dc.contributor.author | Ridgway, M. C. | |
| dc.date.accessioned | 2015-10-07T03:14:25Z | |
| dc.date.available | 2015-10-07T03:14:25Z | |
| dc.date.issued | 2004-10-18 | |
| dc.date.updated | 2015-12-12T08:09:48Z | |
| dc.description.abstract | Au nanocrystals (NCs) fabricated by ion implantation into thin SiO₂ and annealing were investigated by means of extended x-rayabsorption fine structure (EXAFS)spectroscopy and transmission electron microscopy. A bond length contraction was observed and can be explained by surface tension effects in a simple liquid-drop model. Such results are consistent with previous reports on nonembedded NCs implying a negligible influence of the SiO₂ matrix. Cumulant analysis of the EXAFS data suggests surface reconstruction or relaxation involving a further shortened bond length. A deviation from the octahedral closed shell structure is apparent for NCs of size 25Å. | |
| dc.description.sponsorship | P. K. is grateful to the Humboldt Foundation in Germany for support. P.K., B.J., A.C., C.J.G., G.d.M.A., G.J.F., and M.C.R. were supported by the Australian Synchrotron Research Program. | en_AU |
| dc.identifier.issn | 0003-6951 | en_AU |
| dc.identifier.uri | http://hdl.handle.net/1885/15793 | |
| dc.publisher | American Institute of Physics | |
| dc.rights | http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 7/10/15). Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1803619 | |
| dc.source | Applied Physics Letters | |
| dc.title | Bond length contraction in Au nanocrystals formed by ion implantation into thin SiO[sub 2] | |
| dc.type | Journal article | |
| local.bibliographicCitation.issue | 16 | en_AU |
| local.bibliographicCitation.lastpage | 3563 | |
| local.bibliographicCitation.startpage | 3561 | en_AU |
| local.contributor.affiliation | Kluth, Patrick, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.affiliation | Johannessen, Bernt, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.affiliation | Giraud, V, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.affiliation | Cheung, Allen, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.affiliation | Glover, Christopher, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.affiliation | de Azevedo, Gustavo, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.affiliation | Foran, Garry J, Australian Nuclear Science and Technology Organisation, Australia | en_AU |
| local.contributor.affiliation | Ridgway, Mark C, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.authoruid | u4054452 | en_AU |
| local.description.notes | Imported from ARIES | en_AU |
| local.description.refereed | Yes | |
| local.identifier.absfor | 020406 | en_AU |
| local.identifier.ariespublication | MigratedxPub15089 | en_AU |
| local.identifier.citationvolume | 85 | en_AU |
| local.identifier.doi | 10.1063/1.1803619 | en_AU |
| local.identifier.scopusID | 2-s2.0-9744225834 | |
| local.publisher.url | https://www.aip.org/ | en_AU |
| local.type.status | Published Version | en_AU |
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