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A Comparison of Extended Defect Formation Induced by Ion Implantation in (0001) and (1120)4H-SiC

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dc.contributor.authorWong-Leung, Jennifer
dc.contributor.authorLinnarsson, M K
dc.contributor.authorSvensson, Bengt Gunnar
dc.date.accessioned2015-12-13T23:12:01Z
dc.date.available2015-12-13T23:12:01Z
dc.date.issued2003
dc.date.updated2015-12-12T08:30:01Z
dc.description.abstractWe study the effect of substrate orientation on defect formation in 4H-SiC. Both (112̄0) and (0001) n-type 4H-SiC substrates were implanted with 400 keV P. The various samples, both as-implanted samples and annealed, were studied by Rutherford backscatte
dc.identifier.issn0921-4526
dc.identifier.urihttp://hdl.handle.net/1885/87851
dc.publisherElsevier
dc.sourcePhysica B
dc.subjectKeywords: Annealing; Chemical activation; Crystal defects; Crystal orientation; Hydrogen bonds; Ion implantation; Recrystallization (metallurgy); Rutherford backscattering spectroscopy; Secondary ion mass spectrometry; Silicon wafers; Transmission electron microsco Extended defects; Ion implantation; Silicon carbide
dc.titleA Comparison of Extended Defect Formation Induced by Ion Implantation in (0001) and (1120)4H-SiC
dc.typeJournal article
local.bibliographicCitation.lastpage136
local.bibliographicCitation.startpage132
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLinnarsson, M K, Royal Institute of Technology
local.contributor.affiliationSvensson, Bengt Gunnar, University of Oslo
local.contributor.authoruidWong-Leung, Yin-Yin (Jennifer), u9607716
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor091299 - Materials Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub17316
local.identifier.citationvolume340-342
local.identifier.doi10.1016/j.physb.2003.09.052
local.identifier.scopusID2-s2.0-0346504213
local.type.statusPublished Version

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