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A Comparison of Extended Defect Formation Induced by Ion Implantation in (0001) and (1120)4H-SiC

Date

Authors

Wong-Leung, Jennifer

Linnarsson, M K

Svensson, Bengt Gunnar

Publisher

Elsevier

Abstract

We study the effect of substrate orientation on defect formation in 4H-SiC. Both (112̄0) and (0001) n-type 4H-SiC substrates were implanted with 400 keV P. The various samples, both as-implanted samples and annealed, were studied by Rutherford backscatte

Keywords

Keywords: Annealing; Chemical activation; Crystal defects; Crystal orientation; Hydrogen bonds; Ion implantation; Recrystallization (metallurgy); Rutherford backscattering spectroscopy; Secondary ion mass spectrometry; Silicon wafers; Transmission electron microsco Extended defects; Ion implantation; Silicon carbide

URI

http://hdl.handle.net/1885/87851

Collections

ANU Research Publications

Source

Physica B

Type

Journal article

DOI

10.1016/j.physb.2003.09.052