Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors

dc.contributor.authorLi, Naen_AU
dc.contributor.authorFu, Lanen_AU
dc.contributor.authorLi, Ningen_AU
dc.contributor.authorChan, Yan-Cheongen_AU
dc.contributor.authorLu, Weien_AU
dc.contributor.authorShen, S Cen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-10T23:31:04Z
dc.date.issued2001
dc.date.updated2015-12-10T11:11:21Z
dc.description.abstractThe asymmetry of GaAs/AlGaAs quantum wells grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) is investigated by measuring the current-voltage (I-V) and responsivity characteristics of quantum well infrared photodetectors (QWIPs). Different asymmetry behaviors were observed in MBE and MOCVD grown devices due to their different growth mechanisms. Furthermore, the role of one of the post-growth techniques, ion implantation induced quantum well intermixing, on varying the asymmetry of the MBE QWIPs was also studied.
dc.identifier.issn0022-0248
dc.identifier.urihttp://hdl.handle.net/1885/68455
dc.publisherElsevier
dc.sourceJournal of Crystal Growth
dc.subjectKeywords: Current voltage characteristics; Infrared detectors; Ion implantation; Metallorganic chemical vapor deposition; Molecular beam epitaxy; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor growth; Aluminum gallium arsenide; Qu
dc.titleThe asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors
dc.typeJournal article
local.bibliographicCitation.lastpage790
local.bibliographicCitation.startpage786
local.contributor.affiliationLi, Na, Chinese Academy of Sciences
local.contributor.affiliationFu, Lan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLi, Ning, Chinese Academy of Sciences
local.contributor.affiliationChan, Yan-Cheong, University of Hong Kong
local.contributor.affiliationLu, Wei, Chinese Academy of Sciences
local.contributor.affiliationShen, S C, Fudan University
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidFu, Lan, u9715386
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020501 - Classical and Physical Optics
local.identifier.ariespublicationMigratedxPub1717
local.identifier.citationvolume222
local.identifier.doi10.1016/S0022-0248(00)01003-4
local.identifier.scopusID2-s2.0-0035251364
local.type.statusPublished Version

Downloads

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
01_Li_The_asymmetry_in_the_2001.pdf
Size:
180.57 KB
Format:
Adobe Portable Document Format