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The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors

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Date

2001

Authors

Li, Na
Fu, Lan
Li, Ning
Chan, Yan-Cheong
Lu, Wei
Shen, S C
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

The asymmetry of GaAs/AlGaAs quantum wells grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) is investigated by measuring the current-voltage (I-V) and responsivity characteristics of quantum well infrared photodetectors (QWIPs). Different asymmetry behaviors were observed in MBE and MOCVD grown devices due to their different growth mechanisms. Furthermore, the role of one of the post-growth techniques, ion implantation induced quantum well intermixing, on varying the asymmetry of the MBE QWIPs was also studied.

Description

Keywords

Keywords: Current voltage characteristics; Infrared detectors; Ion implantation; Metallorganic chemical vapor deposition; Molecular beam epitaxy; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor growth; Aluminum gallium arsenide; Qu

Citation

URI

http://hdl.handle.net/1885/68455

Collections

ANU Research Publications

Source

Journal of Crystal Growth

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/S0022-0248(00)01003-4

Restricted until

2037-12-31

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