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Filament-type resistive switching in homogeneous Bi-layer Pr0.7Ca0.3MnO3 thin film memory devices

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dc.contributor.authorLiu, Xinjun
dc.contributor.authorBiju, Kuyyadi P.
dc.contributor.authorBourim, El Mostafa
dc.contributor.authorPark, Sangsu
dc.contributor.authorLee, Wootae
dc.contributor.authorLee, Daeseok
dc.contributor.authorSeo, Kyungah
dc.contributor.authorHwang, Hyunsang
dc.date.accessioned2015-12-10T23:18:10Z
dc.date.issued2011
dc.date.updated2016-02-24T09:57:11Z
dc.description.abstractIt is known that Pt/ Pr0.7 Ca0.3 Mn O3 (PCMO)/Pt structures show no hysteresis loops in current-voltage curves due to the symmetric top and bottom interfaces. Here, we prepared an asymmetric memory device using bi-layer PCMO thin films with different oxygen content. The repeatable and stable resistive switching is observed. The excellent resistive switching characteristics such as a large RHRS / RLRS (where HRS is the high resistance state and LRS is the low resistance state) ratio (∼1000), sweeping endurance (>100), and long retention time (> 105 s) can be obtained using a bipolar operation mode. It is suggested that the switching process can be elucidated to the formation and rupture of localized conductive filament along with the migration of oxygen ions.
dc.identifier.issn1099-0062
dc.identifier.urihttp://hdl.handle.net/1885/65504
dc.publisherElectrochemical Society Inc
dc.sourceElectrochemical and Solid-State Letters
dc.subjectKeywords: Bi-layer; Conductive filaments; Current voltage curve; High-resistance state; Low-resistance state; Memory device; Operation mode; Oxygen content; Oxygen ions; Resistive switching; Retention time; Switching process; Symmetric top; Hysteresis; Hysteresis l
dc.titleFilament-type resistive switching in homogeneous Bi-layer Pr0.7Ca0.3MnO3 thin film memory devices
dc.typeJournal article
local.bibliographicCitation.issue1
local.bibliographicCitation.lastpageH12
local.bibliographicCitation.startpageH9
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBiju, Kuyyadi P., Gwangju Institute of Science and Technology
local.contributor.affiliationBourim, El Mostafa, Gwangju Institute of Science and Technology
local.contributor.affiliationPark, Sangsu, Gwangju Institute of Science and Technology
local.contributor.affiliationLee, Wootae, Gwangju Institute of Science and Technology
local.contributor.affiliationLee, Daeseok, Gwangju Institute of Science and Technology
local.contributor.affiliationSeo, Kyungah, Gwangju Institute of Science and Technology
local.contributor.affiliationHwang, Hyunsang, Gwangju Institute of Science and Technology
local.contributor.authoruidLiu, Xinjun, u5361480
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor090604 - Microelectronics and Integrated Circuits
local.identifier.absfor100604 - Memory Structures
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.absseo970110 - Expanding Knowledge in Technology
local.identifier.ariespublicationU3488905xPUB1115
local.identifier.citationvolume14
local.identifier.doi10.1149/1.3505098
local.identifier.scopusID2-s2.0-78751480230
local.identifier.thomsonID000284317600028
local.type.statusPublished Version

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