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A comparative study of transistors based on wurtzite and zincblende InAs nanowires

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dc.contributor.authorWilliams, Marcen_AU
dc.contributor.authorBurke, Adam M.en_AU
dc.contributor.authorJoyce, Hannah Jen_AU
dc.contributor.authorMicolich, Adam Paulen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialCanberra, ACT
dc.date.accessioned2015-12-13T22:58:54Z
dc.date.createdDecember 12-15 2010
dc.date.issued2010
dc.date.updated2016-02-24T08:39:21Z
dc.description.abstractWe report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100.
dc.identifier.isbn9781424473335
dc.identifier.urihttp://hdl.handle.net/1885/83508
dc.publisherIEEE
dc.relation.ispartofseries2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
dc.sourceConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
dc.subjectKeywords: Comparative studies; In-phase; InAs; On/off ratio; Wurtzites; Zinc-blende; Electronic properties; Field effect transistors; Indium arsenide; MESFET devices; Microelectronics; Semiconducting indium; Zinc sulfide; Nanowires
dc.titleA comparative study of transistors based on wurtzite and zincblende InAs nanowires
dc.typeConference paper
local.bibliographicCitation.lastpage204
local.bibliographicCitation.startpage203
local.contributor.affiliationWilliams, Marc, University of New South Wales
local.contributor.affiliationBurke, Adam M., University of New South Wales
local.contributor.affiliationJoyce, Hannah J, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationMicolich, Adam Paul, University of New South Wales
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidJoyce, Hannah J, u4193607
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor100700 - NANOTECHNOLOGY
local.identifier.absfor100799 - Nanotechnology not elsewhere classified
local.identifier.ariespublicationf5625xPUB11787
local.identifier.doi10.1109/COMMAD.2010.5699740
local.identifier.scopusID2-s2.0-79951738752
local.type.statusPublished Version

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