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A comparative study of transistors based on wurtzite and zincblende InAs nanowires

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Date

2010

Authors

Williams, Marc
Burke, Adam M.
Joyce, Hannah J
Micolich, Adam Paul
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100.

Description

Keywords

Keywords: Comparative studies; In-phase; InAs; On/off ratio; Wurtzites; Zinc-blende; Electronic properties; Field effect transistors; Indium arsenide; MESFET devices; Microelectronics; Semiconducting indium; Zinc sulfide; Nanowires

Citation

URI

http://hdl.handle.net/1885/83508

Collections

ANU Research Publications

Source

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2010.5699740

Restricted until

2037-12-31

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01_Williams_A_comparative_study_of_2010.pdf (516.42 KB)

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