Advantages of Zn 1.25 Sb 2 Te 3 material for phase change memory

dc.contributor.authorWang, Guoxiang
dc.contributor.authorNie, Qiuhua
dc.contributor.authorShen, Xiang
dc.contributor.authorWang, Rongping
dc.contributor.authorWu, Liangcai
dc.contributor.authorLv, Yegang
dc.contributor.authorFu, Jing
dc.contributor.authorXu, Tiefeng
dc.contributor.authorDai, Shixun
dc.date.accessioned2015-12-13T22:17:13Z
dc.date.issued2012
dc.date.updated2016-02-24T09:00:05Z
dc.description.abstractThe thermal and electrical properties of Zn 1.25Sb 2Te 3 film have been investigated for phase change memory (PCM) applications. Compared with the conventional Ge 2Sb 2Te 5, Zn 1.25Sb 2Te 3 film exhibits a higher crystallization temperature (∼200°C), g
dc.identifier.issn0167-577X
dc.identifier.urihttp://hdl.handle.net/1885/71031
dc.publisherElsevier
dc.sourceMaterials Letters
dc.subjectKeywords: Crystalline thin films; Crystallization temperature; Data retention; Local bonding; On/off ratio; Reset currents; Activation energy; Cerium alloys; Crystalline materials; Germanium; Phase transitions; Thermodynamic properties; Thin films; Zinc; Electric p Electrical properties; Phase transformation; Thermal properties; Thin films
dc.titleAdvantages of Zn 1.25 Sb 2 Te 3 material for phase change memory
dc.typeJournal article
local.bibliographicCitation.lastpage138
local.bibliographicCitation.startpage135
local.contributor.affiliationWang, Guoxiang, Chinese Academy of Sciences
local.contributor.affiliationNie, Qiuhua, Ningbo University
local.contributor.affiliationShen, Xiang, Ningbo University
local.contributor.affiliationWang, Rongping, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWu, Liangcai, Chinese Academy of Sciences
local.contributor.affiliationLv, Yegang, Chinese Academy of Sciences
local.contributor.affiliationFu, Jing, Ningbo University
local.contributor.affiliationXu, Tiefeng, Ningbo University
local.contributor.affiliationDai, Shixun, Ningbo University
local.contributor.authoremailu4219061@anu.edu.au
local.contributor.authoruidWang, Rongping, u4219061
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020500 - OPTICAL PHYSICS
local.identifier.absfor020400 - CONDENSED MATTER PHYSICS
local.identifier.absfor091200 - MATERIALS ENGINEERING
local.identifier.ariespublicationf5625xPUB2522
local.identifier.citationvolume87
local.identifier.doi10.1016/j.matlet.2012.08.003
local.identifier.scopusID2-s2.0-84865840963
local.identifier.thomsonID000311004500037
local.identifier.uidSubmittedByf5625
local.type.statusPublished Version

Downloads

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
01_Wang_Advantages_of_Zn_1.25_Sb_2_Te__2012.pdf
Size:
434.42 KB
Format:
Adobe Portable Document Format
Back to topicon-arrow-up-solid
 
APRU
IARU
 
edX
Group of Eight Member

Acknowledgement of Country

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.


Contact ANUCopyrightDisclaimerPrivacyFreedom of Information

+61 2 6125 5111 The Australian National University, Canberra

TEQSA Provider ID: PRV12002 (Australian University) CRICOS Provider Code: 00120C ABN: 52 234 063 906