Advantages of Zn 1.25 Sb 2 Te 3 material for phase change memory
dc.contributor.author | Wang, Guoxiang | |
dc.contributor.author | Nie, Qiuhua | |
dc.contributor.author | Shen, Xiang | |
dc.contributor.author | Wang, Rongping | |
dc.contributor.author | Wu, Liangcai | |
dc.contributor.author | Lv, Yegang | |
dc.contributor.author | Fu, Jing | |
dc.contributor.author | Xu, Tiefeng | |
dc.contributor.author | Dai, Shixun | |
dc.date.accessioned | 2015-12-13T22:17:13Z | |
dc.date.issued | 2012 | |
dc.date.updated | 2016-02-24T09:00:05Z | |
dc.description.abstract | The thermal and electrical properties of Zn 1.25Sb 2Te 3 film have been investigated for phase change memory (PCM) applications. Compared with the conventional Ge 2Sb 2Te 5, Zn 1.25Sb 2Te 3 film exhibits a higher crystallization temperature (∼200°C), g | |
dc.identifier.issn | 0167-577X | |
dc.identifier.uri | http://hdl.handle.net/1885/71031 | |
dc.publisher | Elsevier | |
dc.source | Materials Letters | |
dc.subject | Keywords: Crystalline thin films; Crystallization temperature; Data retention; Local bonding; On/off ratio; Reset currents; Activation energy; Cerium alloys; Crystalline materials; Germanium; Phase transitions; Thermodynamic properties; Thin films; Zinc; Electric p Electrical properties; Phase transformation; Thermal properties; Thin films | |
dc.title | Advantages of Zn 1.25 Sb 2 Te 3 material for phase change memory | |
dc.type | Journal article | |
local.bibliographicCitation.lastpage | 138 | |
local.bibliographicCitation.startpage | 135 | |
local.contributor.affiliation | Wang, Guoxiang, Chinese Academy of Sciences | |
local.contributor.affiliation | Nie, Qiuhua, Ningbo University | |
local.contributor.affiliation | Shen, Xiang, Ningbo University | |
local.contributor.affiliation | Wang, Rongping, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Wu, Liangcai, Chinese Academy of Sciences | |
local.contributor.affiliation | Lv, Yegang, Chinese Academy of Sciences | |
local.contributor.affiliation | Fu, Jing, Ningbo University | |
local.contributor.affiliation | Xu, Tiefeng, Ningbo University | |
local.contributor.affiliation | Dai, Shixun, Ningbo University | |
local.contributor.authoremail | u4219061@anu.edu.au | |
local.contributor.authoruid | Wang, Rongping, u4219061 | |
local.description.embargo | 2037-12-31 | |
local.description.notes | Imported from ARIES | |
local.identifier.absfor | 020500 - OPTICAL PHYSICS | |
local.identifier.absfor | 020400 - CONDENSED MATTER PHYSICS | |
local.identifier.absfor | 091200 - MATERIALS ENGINEERING | |
local.identifier.ariespublication | f5625xPUB2522 | |
local.identifier.citationvolume | 87 | |
local.identifier.doi | 10.1016/j.matlet.2012.08.003 | |
local.identifier.scopusID | 2-s2.0-84865840963 | |
local.identifier.thomsonID | 000311004500037 | |
local.identifier.uidSubmittedBy | f5625 | |
local.type.status | Published Version |
Downloads
Original bundle
1 - 1 of 1
No Thumbnail Available
- Name:
- 01_Wang_Advantages_of_Zn_1.25_Sb_2_Te__2012.pdf
- Size:
- 434.42 KB
- Format:
- Adobe Portable Document Format