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Advantages of Zn 1.25 Sb 2 Te 3 material for phase change memory

Date

Authors

Wang, Guoxiang

Nie, Qiuhua

Shen, Xiang

Wang, Rongping

Wu, Liangcai

Lv, Yegang

Fu, Jing

Xu, Tiefeng

Dai, Shixun

Publisher

Elsevier

Abstract

The thermal and electrical properties of Zn 1.25Sb 2Te 3 film have been investigated for phase change memory (PCM) applications. Compared with the conventional Ge 2Sb 2Te 5, Zn 1.25Sb 2Te 3 film exhibits a higher crystallization temperature (∼200°C), g

Keywords

Keywords: Crystalline thin films; Crystallization temperature; Data retention; Local bonding; On/off ratio; Reset currents; Activation energy; Cerium alloys; Crystalline materials; Germanium; Phase transitions; Thermodynamic properties; Thin films; Zinc; Electric p Electrical properties; Phase transformation; Thermal properties; Thin films

URI

http://hdl.handle.net/1885/71031

Collections

ANU Research Publications

Source

Materials Letters

Type

Journal article

DOI

10.1016/j.matlet.2012.08.003

Restricted until

2037-12-31

Downloads

File

Description

01_Wang_Advantages_of_Zn_1.25_Sb_2_Te__2012.pdf (434.42 KB)