Advantages of Zn 1.25 Sb 2 Te 3 material for phase change memory
Date
2012
Authors
Wang, Guoxiang
Nie, Qiuhua
Shen, Xiang
Wang, Rongping
Wu, Liangcai
Lv, Yegang
Fu, Jing
Xu, Tiefeng
Dai, Shixun
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Elsevier
Abstract
The thermal and electrical properties of Zn 1.25Sb 2Te 3 film have been investigated for phase change memory (PCM) applications. Compared with the conventional Ge 2Sb 2Te 5, Zn 1.25Sb 2Te 3 film exhibits a higher crystallization temperature (∼200°C), g
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Keywords
Keywords: Crystalline thin films; Crystallization temperature; Data retention; Local bonding; On/off ratio; Reset currents; Activation energy; Cerium alloys; Crystalline materials; Germanium; Phase transitions; Thermodynamic properties; Thin films; Zinc; Electric p Electrical properties; Phase transformation; Thermal properties; Thin films
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Source
Materials Letters
Type
Journal article
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2037-12-31
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