Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

In situ hole doping of wide-gap semiconductors by dual-target simultaneous laser ablation: GaN and SiC epitaxial films

Simple item page
dc.contributor.authorMuto, Hachizo
dc.contributor.authorAsano, Takashi
dc.contributor.authorWang, Rong-Ping
dc.contributor.authorKusumori, Takeshi
dc.date.accessioned2015-12-21T23:02:58Z
dc.date.available2015-12-21T23:02:58Z
dc.date.issued2005-10-14
dc.date.updated2016-02-24T12:17:57Z
dc.description.abstractApparatus for dual-target simultaneous laser ablation deposition and in situdoping techniques have been developed to achieve p-type doping during epitaxialgrowth of wide-band-gap semiconductors. The apparatus has two target holders with a target-rotation mechanism and a rotation-axis adjusting mechanism to obtain homogeneously dopedfilms. Mg-doped GaNfilms have been fabricated on 6H–SiC(0001) and Si(111) substrates in NH₃ ambient by simultaneous ablation of GaN and Mg-metal targets using two lasers. Junctions of the films with n-type substrates show a diode curve characteristic of p-n junctions, but not for junction with p-Si, indicating hole doping without further procedures. In situ p-type doping to SiC was also achieved by using SiC and Al₄C₃ targets.
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/95158
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 22/12/15). Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2105989
dc.sourceApplied Physics Letters
dc.subjectKeywords: Energy gap; Epitaxial growth; Silicon carbide; Laser ablation deposition; Target-rotation; Wide-band-gap semiconductors; Semiconductor materials
dc.titleIn situ hole doping of wide-gap semiconductors by dual-target simultaneous laser ablation: GaN and SiC epitaxial films
dc.typeJournal article
local.bibliographicCitation.issue16en_AU
local.bibliographicCitation.lastpage3
local.bibliographicCitation.startpage162106en_AU
local.contributor.affiliationMuto, Hachizo, National Institute of Advanced Industrial Science and Technology, Japanen_AU
local.contributor.affiliationAsano, Takashi, National Institute of Advanced Industrial Science and Technology, Japanen_AU
local.contributor.affiliationWang, Rongping, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Laser Physics Centre, The Australian National Universityen_AU
local.contributor.affiliationKusumori, Takeshi, National Institute of Advanced Industrial Science and Technology, Japanen_AU
local.contributor.authoruidu4219061en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020406en_AU
local.identifier.absfor091203en_AU
local.identifier.ariespublicationu9912193xPUB71en_AU
local.identifier.citationvolume87en_AU
local.identifier.doi10.1063/1.2105989en_AU
local.identifier.scopusID2-s2.0-28344444038
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

Downloads

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
01_Muto_In_situ_hole_doping_of_2005.pdf
Size:
198.96 KB
Format:
Adobe Portable Document Format
Description:
Published Version
Download

License bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
884 B
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

ANU Research Publications

DSpace software copyright © 2002-2026 LYRASIS