Si-SiO2 interface passivation by plasma NH3 and atomic H
| dc.contributor.author | Jin, Hao | en_AU |
| dc.contributor.author | Weber, Klaus | en_AU |
| dc.contributor.author | Jayaprasad, A | en_AU |
| dc.contributor.author | Smith, Paul | en_AU |
| dc.contributor.author | Blakers, Andrew | en_AU |
| dc.date.accessioned | 2015-12-07T22:52:48Z | |
| dc.date.issued | 2006 | |
| dc.date.updated | 2015-12-07T12:33:03Z | |
| dc.description.abstract | Plasma ammonia treatment at 400°C leads to de-passivation of a fully hydrogenated Si-SiO2 interface, and to passivation of a fully de-hydrogenated Si-SiO2 interface. Plasma NH3 exposure causes irreversible Si surface damage and degradation of thermal sta | |
| dc.identifier.issn | 1001-0521 | |
| dc.identifier.uri | http://hdl.handle.net/1885/27587 | |
| dc.publisher | Zhongguo Youse Jinshu Xuehui | |
| dc.source | Rare Metals | |
| dc.subject | Keywords: Defects; Electric properties; Hydrogen; Interfaces (materials); Passivation; Radiation damage; Silicon; Thermodynamic stability; Atomic hydrogen; Plasma ammonia treatment; Silica Atomic H; EPR; Plasma NH3; SiO2 | |
| dc.title | Si-SiO2 interface passivation by plasma NH3 and atomic H | |
| dc.type | Journal article | |
| local.bibliographicCitation.issue | Special Issue | |
| local.bibliographicCitation.lastpage | 149 | |
| local.bibliographicCitation.startpage | 146 | |
| local.contributor.affiliation | Jin, Hao, College of Engineering and Computer Science, ANU | |
| local.contributor.affiliation | Weber, Klaus, College of Engineering and Computer Science, ANU | |
| local.contributor.affiliation | Jayaprasad, A, University of Konstanz | |
| local.contributor.affiliation | Smith, Paul, College of Physical and Mathematical Sciences, ANU | |
| local.contributor.affiliation | Blakers, Andrew, College of Engineering and Computer Science, ANU | |
| local.contributor.authoruid | Jin, Hao, u4065013 | |
| local.contributor.authoruid | Weber, Klaus, u9116880 | |
| local.contributor.authoruid | Smith, Paul, u8605230 | |
| local.contributor.authoruid | Blakers, Andrew, u9113453 | |
| local.description.embargo | 2037-12-31 | |
| local.description.notes | Imported from ARIES | |
| local.identifier.absfor | 090699 - Electrical and Electronic Engineering not elsewhere classified | |
| local.identifier.absfor | 091299 - Materials Engineering not elsewhere classified | |
| local.identifier.absseo | 850504 - Solar-Photovoltaic Energy | |
| local.identifier.ariespublication | u4251866xPUB52 | |
| local.identifier.citationvolume | 25 | |
| local.identifier.doi | 10.1016/S1001-0521(07)60062-X | |
| local.identifier.scopusID | 2-s2.0-33846813950 | |
| local.type.status | Published Version |
Downloads
Original bundle
1 - 1 of 1
Loading...
- Name:
- 01_Jin_Si-SiO2_interface_passivation_2006.pdf
- Size:
- 177.08 KB
- Format:
- Adobe Portable Document Format