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Si-SiO2 interface passivation by plasma NH3 and atomic H

Date

Authors

Jin, Hao

Weber, Klaus

Jayaprasad, A

Smith, Paul

Blakers, Andrew

Publisher

Zhongguo Youse Jinshu Xuehui

Abstract

Plasma ammonia treatment at 400°C leads to de-passivation of a fully hydrogenated Si-SiO2 interface, and to passivation of a fully de-hydrogenated Si-SiO2 interface. Plasma NH3 exposure causes irreversible Si surface damage and degradation of thermal sta

Keywords

Keywords: Defects; Electric properties; Hydrogen; Interfaces (materials); Passivation; Radiation damage; Silicon; Thermodynamic stability; Atomic hydrogen; Plasma ammonia treatment; Silica Atomic H; EPR; Plasma NH3; SiO2

URI

http://hdl.handle.net/1885/27587

Collections

ANU Research Publications

Source

Rare Metals

Type

Journal article

DOI

10.1016/S1001-0521(07)60062-X

Restricted until

2037-12-31

Downloads

File

Description

01_Jin_Si-SiO2_interface_passivation_2006.pdf (177.08 KB)

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