Comparison of Photocurrent Spectra of InGaAsN QD and InGaAs QW Laser Devices

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dc.contributor.authorGao, Qiangen_AU
dc.contributor.authorBuda, Manuelaen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialBrisbane Australia
dc.date.accessioned2015-12-10T22:28:15Z
dc.date.available2015-12-10T22:28:15Z
dc.date.createdDecember 8 2004
dc.date.issued2005
dc.date.updated2015-12-09T09:46:30Z
dc.description.abstractAn InGaAsN quantum dot (QD) laser structure and a reference InGaAs single quantum well (QW) laser structure were grown on GaAs substrates by metalorganic chemical vapor deposition. A comparison study of photocurrent spectra of these two structures was performed. It was found that InGaAsN QD devices exhibit a lower-energy transition and shows a smaller quantum-confined Stark effect than InGaAs QW devices. Also the wetting layer of InGaAsN QD devices shows a broader absorption peak than the InGaAs QW layer.
dc.identifier.isbn1097-2137
dc.identifier.urihttp://hdl.handle.net/1885/54404
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004)
dc.source2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
dc.subjectKeywords: Absorption; Chemical vapor deposition; Electron absorption; Energy absorption; Gallium alloys; Lasers; Metallizing; Photocurrents; Pulsed laser deposition; Quantum electronics; Quantum well lasers; Semiconducting cadmium telluride; Semiconducting indium; InGaAsN; MOCVD; Photocurrent; Quantum dot laser
dc.titleComparison of Photocurrent Spectra of InGaAsN QD and InGaAs QW Laser Devices
dc.typeConference paper
local.bibliographicCitation.lastpage12
local.bibliographicCitation.startpage9
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBuda, Manuela, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidGao, Qiang, u4006742
local.contributor.authoruidBuda, Manuela, u4012377
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020604 - Quantum Optics
local.identifier.absfor100799 - Nanotechnology not elsewhere classified
local.identifier.ariespublicationMigratedxPub300
local.identifier.doi10.1109/COMMAD.2004.1577479
local.identifier.scopusID2-s2.0-46149115398
local.type.statusPublished Version

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