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Comparison of Photocurrent Spectra of InGaAsN QD and InGaAs QW Laser Devices

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Date

2005

Authors

Gao, Qiang
Buda, Manuela
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

An InGaAsN quantum dot (QD) laser structure and a reference InGaAs single quantum well (QW) laser structure were grown on GaAs substrates by metalorganic chemical vapor deposition. A comparison study of photocurrent spectra of these two structures was performed. It was found that InGaAsN QD devices exhibit a lower-energy transition and shows a smaller quantum-confined Stark effect than InGaAs QW devices. Also the wetting layer of InGaAsN QD devices shows a broader absorption peak than the InGaAs QW layer.

Description

Keywords

Keywords: Absorption; Chemical vapor deposition; Electron absorption; Energy absorption; Gallium alloys; Lasers; Metallizing; Photocurrents; Pulsed laser deposition; Quantum electronics; Quantum well lasers; Semiconducting cadmium telluride; Semiconducting indium; InGaAsN; MOCVD; Photocurrent; Quantum dot laser

Citation

URI

http://hdl.handle.net/1885/54404

Collections

ANU Research Publications

Source

2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2004.1577479

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