Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration

dc.contributor.authorMokkapati, Sudhaen_AU
dc.contributor.authorLever McGowan, Penelopeen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorMcBean, K. E.en_AU
dc.contributor.authorPhillips, Matthew R.en_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialBrisbane Australia
dc.date.accessioned2015-12-10T22:27:01Z
dc.date.available2015-12-10T22:27:01Z
dc.date.createdDecember 8 2004
dc.date.issued2005
dc.date.updated2015-12-09T09:36:56Z
dc.description.abstractWe demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a
dc.identifier.isbn1097-2137
dc.identifier.urihttp://hdl.handle.net/1885/54013
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004)
dc.source2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
dc.subjectKeywords: Chemical vapor deposition; Crystal growth; Epitaxial growth; Optoelectronic devices; Quantum electronics; Semiconducting indium; Semiconductor quantum dots; (PL) properties; device integration; Microelectronic materials; MOCVD growth; Quantum Dot (CO); Se Integrated optoelectronic devices; Quantum dot; Selective area epitaxy
dc.titleSelective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration
dc.typeConference paper
local.bibliographicCitation.lastpage275
local.bibliographicCitation.startpage273
local.contributor.affiliationMokkapati, Sudha, College of Engineering and Computer Science, ANU
local.contributor.affiliationLever McGowan, Penelope, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationMcBean, K E, University of Technology Sydney
local.contributor.affiliationPhillips, Matthew R, University of Technology Sydney
local.contributor.authoruidMokkapati, Sudha, u2576041
local.contributor.authoruidLever McGowan, Penelope, u9915543
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2099-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020501 - Classical and Physical Optics
local.identifier.absfor100799 - Nanotechnology not elsewhere classified
local.identifier.ariespublicationMigratedxPub289
local.identifier.doi10.1109/COMMAD.2004.1577543
local.identifier.scopusID2-s2.0-46149087539
local.type.statusPublished Version

Downloads

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
01577543.pdf
Size:
177.74 KB
Format:
Adobe Portable Document Format