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Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration

Date

Authors

Mokkapati, Sudha

Lever McGowan, Penelope

Jagadish, Chennupati

McBean, K. E.

Phillips, Matthew R.

Tan, Hark Hoe

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a

Keywords

Keywords: Chemical vapor deposition; Crystal growth; Epitaxial growth; Optoelectronic devices; Quantum electronics; Semiconducting indium; Semiconductor quantum dots; (PL) properties; device integration; Microelectronic materials; MOCVD growth; Quantum Dot (CO); Se Integrated optoelectronic devices; Quantum dot; Selective area epitaxy

URI

http://hdl.handle.net/1885/54013

Collections

ANU Research Publications

Source

2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

Type

Conference paper

DOI

10.1109/COMMAD.2004.1577543

Restricted until

2099-12-31

Downloads

File

Description

01577543.pdf (177.74 KB)

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