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Phosphorus gettering in multicrystalline silicon studied by neutron activation analysis

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dc.contributor.authorMacdonald, Den_US
dc.contributor.authorCuevas, Andresen_US
dc.contributor.authorKinomura, Aen_US
dc.contributor.authorNakano, Yukihiroen_US
dc.coverage.spatialNew Orleans, Louisianaen_US
dc.date.accessioned2003-07-30en_US
dc.date.accessioned2004-05-19T13:00:27Zen_US
dc.date.accessioned2011-01-05T08:29:12Z
dc.date.available2004-05-19T13:00:27Zen_US
dc.date.available2011-01-05T08:29:12Z
dc.date.created2002en_US
dc.date.issued2002en_US
dc.description.abstractNeutron Activation Analysis (NAA) is a powerful and sensitive technique for measuring trace amounts of impurities. In this work, we have applied NAA to the problem of identifying metallic impurities within the bulk of solar-grade cast multicrystalline silicon (mc-Si) wafers. In particular, the change in concentrations of these contaminants after phosphorus gettering is monitored, revealing a marked reduction in some metal species, but not in others.en_US
dc.format.extent110841 bytesen_US
dc.format.extent361 bytesen_US
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/octet-streamen_US
dc.identifier.urihttp://hdl.handle.net/1885/40829en_US
dc.identifier.urihttp://digitalcollections.anu.edu.au/handle/1885/40829
dc.language.isoen_AUen_US
dc.relation.ispartofseries29th IEEE PVSCen_US
dc.subjectNeutron Activation Analysisen_US
dc.subjectNAAen_US
dc.subjectmulticrystalline silicon wafersen_US
dc.subjectphosphorus getteringen_US
dc.titlePhosphorus gettering in multicrystalline silicon studied by neutron activation analysisen_US
dc.typeConference paperen_US
local.description.refereednoen_US
local.identifier.citationyear2002en_US
local.identifier.eprintid1776en_US
local.rights.ispublishedyesen_US

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