Strong mid-infrared optical absorption by supersaturated sulfur doping in silicon

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dc.contributor.authorUmezu, Ikurou
dc.contributor.authorKohno, A
dc.contributor.authorWarrender, Jeffrey M.
dc.contributor.authorTakatori, Y
dc.contributor.authorHirao, Y
dc.contributor.authorNakagawa, S
dc.contributor.authorSugimura, A
dc.contributor.authorCharnvanichborikarn, Supakit
dc.contributor.authorWilliams, James
dc.contributor.authorAziz, Michael
dc.coverage.spatialSeoul South Korea
dc.date.accessioned2015-12-08T22:27:12Z
dc.date.createdJuly 25-30 2010
dc.date.issued2011
dc.date.updated2016-02-24T08:37:17Z
dc.description.abstractSingle crystalline silicon supersaturated with sulfur was prepared by ion implantation followed by pulsed laser melting and rapid solidification. A strong and broad optical absorption band and free-carrier absorption appeared for this sample around 0.5 eV and below 0.2 eV, respectively. A possible candidate for the origin of the 0.5 eV band is the formation of an impurity band by supersaturated doping.
dc.identifier.isbn9780735410022
dc.identifier.urihttp://hdl.handle.net/1885/33973
dc.publisherAmerican Institute of Physics (AIP)
dc.relation.ispartofseriesInternational Conference on the Physics of Semiconductors 2010
dc.sourceAIP Conference Proceedings
dc.source.urihttp://www.scopus.com/inward/record.url?eid=2-s2.0-84855496536&partnerID=40&md5=a42829812487f31ecded9352bff0bb42
dc.subjectKeywords: impurity band; optical absorption; Pulsed laser melting; silicon; solidification; sulfur; supersaturation
dc.titleStrong mid-infrared optical absorption by supersaturated sulfur doping in silicon
dc.typeConference paper
local.bibliographicCitation.lastpage52
local.bibliographicCitation.startpage51
local.contributor.affiliationUmezu, Ikurou, Harvard University
local.contributor.affiliationKohno, A, Konan University
local.contributor.affiliationWarrender, Jeffrey M., US Army
local.contributor.affiliationTakatori, Y, Konan University
local.contributor.affiliationHirao, Y, Konan University
local.contributor.affiliationNakagawa, S, Konan University
local.contributor.affiliationSugimura, A, Konan University
local.contributor.affiliationCharnvanichborikarn, Supakit, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationAziz, Michael, Harvard University
local.contributor.authoruidCharnvanichborikarn, Supakit, u3251081
local.contributor.authoruidWilliams, James, u8809701
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationf5625xPUB108
local.identifier.doi10.1063/1.3666252
local.identifier.scopusID2-s2.0-84862777011
local.identifier.thomsonID000301053000014
local.type.statusPublished Version

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