Strong mid-infrared optical absorption by supersaturated sulfur doping in silicon

Umezu, Ikurou; Kohno, A; Warrender, Jeffrey M.; Takatori, Y; Hirao, Y; Nakagawa, S; Sugimura, A; Charnvanichborikarn, Supakit; Williams, James; Aziz, Michael

Strong mid-infrared optical absorption by supersaturated sulfur doping in silicon

Date

2011

Authors

Umezu, Ikurou

Kohno, A

Warrender, Jeffrey M.

Takatori, Y

Hirao, Y

Nakagawa, S

Sugimura, A

Charnvanichborikarn, Supakit

Williams, James

Aziz, Michael

Publisher

American Institute of Physics (AIP)

Abstract

Single crystalline silicon supersaturated with sulfur was prepared by ion implantation followed by pulsed laser melting and rapid solidification. A strong and broad optical absorption band and free-carrier absorption appeared for this sample around 0.5 eV and below 0.2 eV, respectively. A possible candidate for the origin of the 0.5 eV band is the formation of an impurity band by supersaturated doping.