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Reduction of Band-Gap Energy in GaNAs and AlGaNAs Synthesized by N+ Implantation

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dc.contributor.authorShan, Wei
dc.contributor.authorYu, Kin Man
dc.contributor.authorWalukiewicz, W
dc.contributor.authorAger, J W
dc.contributor.authorHaller, E E
dc.contributor.authorRidgway, Mark C
dc.date.accessioned2015-12-13T23:34:18Z
dc.date.issued1999
dc.date.updated2015-12-12T09:35:31Z
dc.description.abstractThe optical properties of nitrogen implanted GaAs and AlGaAs were investigated. The change in band-gap energy in the implanted region was analyzed using photomodulation spectroscopy. Results showed that by increasing N+ implantation dosage, the fundamental band-gap energy decreases.
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/93405
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceApplied Physics Letters
dc.subjectKeywords: Annealing; Ion implantation; Light modulation; Metallorganic chemical vapor deposition; Molecular beam epitaxy; Nitrogen; Semiconducting aluminum compounds; Semiconducting gallium compounds; Semiconductor growth; Spectroscopic analysis; Synthesis (chemica
dc.titleReduction of Band-Gap Energy in GaNAs and AlGaNAs Synthesized by N+ Implantation
dc.typeJournal article
local.bibliographicCitation.issue10
local.bibliographicCitation.lastpage1412
local.bibliographicCitation.startpage1410
local.contributor.affiliationShan, Wei, OptiWork, Inc.
local.contributor.affiliationYu, Kin Man, Lawrence Livermore National Laboratory
local.contributor.affiliationWalukiewicz, W, Lawrence Berkeley National Laboratory
local.contributor.affiliationAger, J W, Lawrence Berkeley National Laboratory
local.contributor.affiliationHaller, E E, University of California
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidRidgway, Mark C, u9001886
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub24747
local.identifier.citationvolume75
local.identifier.scopusID2-s2.0-0032606273
local.type.statusPublished Version

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