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Reduction of Band-Gap Energy in GaNAs and AlGaNAs Synthesized by N+ Implantation

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Date

1999

Authors

Shan, Wei
Yu, Kin Man
Walukiewicz, W
Ager, J W
Haller, E E
Ridgway, Mark C

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The optical properties of nitrogen implanted GaAs and AlGaAs were investigated. The change in band-gap energy in the implanted region was analyzed using photomodulation spectroscopy. Results showed that by increasing N+ implantation dosage, the fundamental band-gap energy decreases.

Description

Keywords

Keywords: Annealing; Ion implantation; Light modulation; Metallorganic chemical vapor deposition; Molecular beam epitaxy; Nitrogen; Semiconducting aluminum compounds; Semiconducting gallium compounds; Semiconductor growth; Spectroscopic analysis; Synthesis (chemica

Citation

URI

http://hdl.handle.net/1885/93405

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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