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High rate etching of 4H-SiC using a SF6/O2 helicon plasma

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dc.contributor.authorChabert, Pascal
dc.contributor.authorProust, N
dc.contributor.authorPerrin, J
dc.contributor.authorBoswell, Roderick
dc.date.accessioned2015-12-13T23:16:09Z
dc.date.issued2000
dc.date.updated2015-12-12T08:46:50Z
dc.description.abstractThe etch rate of 4H-SiC in a SF6 helicon plasma has been investigated as a function of pressure, power injected in the source, substrate bias voltage, and distance between the substrate holder and the helicon source. The highest etch rate yet reported of
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/89260
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceApplied Physics Letters
dc.titleHigh rate etching of 4H-SiC using a SF6/O2 helicon plasma
dc.typeJournal article
local.bibliographicCitation.issue16
local.bibliographicCitation.lastpage2312
local.bibliographicCitation.startpage2310
local.contributor.affiliationChabert, Pascal, Ecole Polytechnique
local.contributor.affiliationProust, N, Thomson-CSF/LCR,
local.contributor.affiliationPerrin, J, Airliquide
local.contributor.affiliationBoswell, Roderick, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidBoswell, Roderick, u8000743
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.ariespublicationMigratedxPub19225
local.identifier.citationvolume76
local.identifier.scopusID2-s2.0-0001167037
local.type.statusPublished Version

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