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High rate etching of 4H-SiC using a SF6/O2 helicon plasma

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Date

2000

Authors

Chabert, Pascal
Proust, N
Perrin, J
Boswell, Roderick

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The etch rate of 4H-SiC in a SF6 helicon plasma has been investigated as a function of pressure, power injected in the source, substrate bias voltage, and distance between the substrate holder and the helicon source. The highest etch rate yet reported of

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Citation

URI

http://hdl.handle.net/1885/89260

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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