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III-V compound semiconductor nanowires for optoelectronic device applications

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dc.contributor.authorGao, Qiangen_AU
dc.contributor.authorJoyce, Hannah Jen_AU
dc.contributor.authorPaiman, Suriatien_AU
dc.contributor.authorKang, Jung-Hyunen_AU
dc.contributor.authorKim, Yongen_AU
dc.contributor.authorSmith, Leigh Men_AU
dc.contributor.authorJackson, Howard Een_AU
dc.contributor.authorYarrison-Rice, Jan Men_AU
dc.contributor.authorZou, Jinen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-08T22:16:55Z
dc.date.issued2011
dc.date.updated2016-02-24T10:38:27Z
dc.description.abstractGaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB, can also be engineered by carefully controlling the V/III ratio and catalyst size.
dc.identifier.issn0129-1564
dc.identifier.urihttp://hdl.handle.net/1885/30899
dc.publisherWorld Scientific Publishing Company
dc.sourceInternational Journal of High Speed Electronics and Systems
dc.subjectKeywords: Au nanoparticle; Carrier dynamics; Catalyst size; Defect-free; Exciton lifetime; GaAs; Growth parameters; III-V compound semiconductor; InP; Metalorganic chemical vapor deposition; Research activities; Si (1 1 1); Straight nanowires; V/III ratio; Catalyst carrier dynamics; III-V compound semiconductors; metalorganic chemical vapor deposition; Nanowires; photoluminescence
dc.titleIII-V compound semiconductor nanowires for optoelectronic device applications
dc.typeJournal article
local.bibliographicCitation.issue1
local.bibliographicCitation.lastpage141
local.bibliographicCitation.startpage131
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJoyce, Hannah J, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationPaiman, Suriati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKang, Jung-Hyun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKim, Yong, Dong-A University
local.contributor.affiliationSmith, Leigh M , University of Cincinnati
local.contributor.affiliationJackson, Howard E , University of Cincinnati
local.contributor.affiliationYarrison-Rice, Jan M , University of Miami
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidGao, Qiang, u4006742
local.contributor.authoruidJoyce, Hannah J, u4193607
local.contributor.authoruidPaiman, Suriati, u4256436
local.contributor.authoruidKang, Jung-Hyun, u4335853
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationu4153526xPUB78
local.identifier.citationvolume20
local.identifier.doi10.1142/S0129156411006465
local.identifier.scopusID2-s2.0-79955393446
local.type.statusPublished Version

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