III-V compound semiconductor nanowires for optoelectronic device applications
dc.contributor.author | Gao, Qiang | en_AU |
dc.contributor.author | Joyce, Hannah J | en_AU |
dc.contributor.author | Paiman, Suriati | en_AU |
dc.contributor.author | Kang, Jung-Hyun | en_AU |
dc.contributor.author | Kim, Yong | en_AU |
dc.contributor.author | Smith, Leigh M | en_AU |
dc.contributor.author | Jackson, Howard E | en_AU |
dc.contributor.author | Yarrison-Rice, Jan M | en_AU |
dc.contributor.author | Zou, Jin | en_AU |
dc.contributor.author | Jagadish, Chennupati | en_AU |
dc.contributor.author | Tan, Hark Hoe | en_AU |
dc.date.accessioned | 2015-12-08T22:16:55Z | |
dc.date.issued | 2011 | |
dc.date.updated | 2016-02-24T10:38:27Z | |
dc.description.abstract | GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB, can also be engineered by carefully controlling the V/III ratio and catalyst size. | |
dc.identifier.issn | 0129-1564 | |
dc.identifier.uri | http://hdl.handle.net/1885/30899 | |
dc.publisher | World Scientific Publishing Company | |
dc.source | International Journal of High Speed Electronics and Systems | |
dc.subject | Keywords: Au nanoparticle; Carrier dynamics; Catalyst size; Defect-free; Exciton lifetime; GaAs; Growth parameters; III-V compound semiconductor; InP; Metalorganic chemical vapor deposition; Research activities; Si (1 1 1); Straight nanowires; V/III ratio; Catalyst carrier dynamics; III-V compound semiconductors; metalorganic chemical vapor deposition; Nanowires; photoluminescence | |
dc.title | III-V compound semiconductor nanowires for optoelectronic device applications | |
dc.type | Journal article | |
local.bibliographicCitation.issue | 1 | |
local.bibliographicCitation.lastpage | 141 | |
local.bibliographicCitation.startpage | 131 | |
local.contributor.affiliation | Gao, Qiang, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Joyce, Hannah J, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Paiman, Suriati, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Kang, Jung-Hyun, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Tan, Hoe Hark, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Kim, Yong, Dong-A University | |
local.contributor.affiliation | Smith, Leigh M , University of Cincinnati | |
local.contributor.affiliation | Jackson, Howard E , University of Cincinnati | |
local.contributor.affiliation | Yarrison-Rice, Jan M , University of Miami | |
local.contributor.affiliation | Zou, Jin, University of Queensland | |
local.contributor.affiliation | Jagadish, Chennupati, College of Physical and Mathematical Sciences, ANU | |
local.contributor.authoremail | u9302338@anu.edu.au | |
local.contributor.authoruid | Gao, Qiang, u4006742 | |
local.contributor.authoruid | Joyce, Hannah J, u4193607 | |
local.contributor.authoruid | Paiman, Suriati, u4256436 | |
local.contributor.authoruid | Kang, Jung-Hyun, u4335853 | |
local.contributor.authoruid | Tan, Hoe Hark, u9302338 | |
local.contributor.authoruid | Jagadish, Chennupati, u9212349 | |
local.description.embargo | 2037-12-31 | |
local.description.notes | Imported from ARIES | |
local.identifier.absfor | 020499 - Condensed Matter Physics not elsewhere classified | |
local.identifier.ariespublication | u4153526xPUB78 | |
local.identifier.citationvolume | 20 | |
local.identifier.doi | 10.1142/S0129156411006465 | |
local.identifier.scopusID | 2-s2.0-79955393446 | |
local.identifier.uidSubmittedBy | u4153526 | |
local.type.status | Published Version |
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