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III-V compound semiconductor nanowires for optoelectronic device applications

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Date

2011

Authors

Gao, Qiang
Joyce, Hannah J
Paiman, Suriati
Kang, Jung-Hyun
Kim, Yong
Smith, Leigh M
Jackson, Howard E
Yarrison-Rice, Jan M
Zou, Jin
Jagadish, Chennupati

Journal Title

Journal ISSN

Volume Title

Publisher

World Scientific Publishing Company

Abstract

GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB, can also be engineered by carefully controlling the V/III ratio and catalyst size.

Description

Keywords

Keywords: Au nanoparticle; Carrier dynamics; Catalyst size; Defect-free; Exciton lifetime; GaAs; Growth parameters; III-V compound semiconductor; InP; Metalorganic chemical vapor deposition; Research activities; Si (1 1 1); Straight nanowires; V/III ratio; Catalyst carrier dynamics; III-V compound semiconductors; metalorganic chemical vapor deposition; Nanowires; photoluminescence

Citation

URI

http://hdl.handle.net/1885/30899

Collections

ANU Research Publications

Source

International Journal of High Speed Electronics and Systems

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1142/S0129156411006465

Restricted until

2037-12-31

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01_Gao_III-V_compound_semiconductor_2011.pdf (268.24 KB)

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